Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications

Md Mahbub Satter; Yuh Shiuan Liu; Tsung Ting Kao; Zachary Lochner; Xiaohang Li; Jae Hyun Ryou; Shyh Chiang Shen; Theeradetch Detchprohm; Russell D. Dupuis; P. Douglas Yoder

doi:10.1002/pssc.201300679

Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications

Md Mahbub Satter, Yuh Shiuan Liu, Tsung Ting Kao, Zachary Lochner, Xiaohang Li, Jae Hyun Ryou, Shyh Chiang Shen, Theeradetch Detchprohm, Russell D. Dupuis, P. Douglas Yoder^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Achieving high p-type conductivity is one of the most significant bottlenecks to the efficient operation of wurtzite III-N based optoelectronic and microelectronic devices. Through judicious volumetric redistribution of fixed negative polarization charge, compositionally graded layers may be exploited to achieve nearly flat valence band profiles free from electrostatic barriers to hole injection into the active region. This may potentially ameliorate problems associated with poor p-type conductivity and inefficient hole transport that complicates the design of DUV laser diodes and light emitting diodes.

Original language	English (US)
Pages (from-to)	828-831
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300679
State	Published - Apr 2014
Externally published	Yes

Keywords

Deep ultraviolet
Gallium nitride
Laser diode
Numerical simulation

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300679

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Satter, M. M., Liu, Y. S., Kao, T. T., Lochner, Z., Li, X., Ryou, J. H., Shen, S. C., Detchprohm, T., Dupuis, R. D., & Yoder, P. D. (2014). Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(3-4), 828-831. https://doi.org/10.1002/pssc.201300679

@article{a68b938f65b54338a9a81e0c984b8c40,

title = "Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications",

abstract = "Achieving high p-type conductivity is one of the most significant bottlenecks to the efficient operation of wurtzite III-N based optoelectronic and microelectronic devices. Through judicious volumetric redistribution of fixed negative polarization charge, compositionally graded layers may be exploited to achieve nearly flat valence band profiles free from electrostatic barriers to hole injection into the active region. This may potentially ameliorate problems associated with poor p-type conductivity and inefficient hole transport that complicates the design of DUV laser diodes and light emitting diodes.",

keywords = "Deep ultraviolet, Gallium nitride, Laser diode, Numerical simulation",

author = "Satter, {Md Mahbub} and Liu, {Yuh Shiuan} and Kao, {Tsung Ting} and Zachary Lochner and Xiaohang Li and Ryou, {Jae Hyun} and Shen, {Shyh Chiang} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Yoder, {P. Douglas}",

year = "2014",

month = apr,

doi = "10.1002/pssc.201300679",

language = "English (US)",

volume = "11",

pages = "828--831",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "3-4",

}

Satter, MM, Liu, YS, Kao, TT, Lochner, Z, Li, X, Ryou, JH, Shen, SC, Detchprohm, T, Dupuis, RD & Yoder, PD 2014, 'Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 11, no. 3-4, pp. 828-831. https://doi.org/10.1002/pssc.201300679

Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications. / Satter, Md Mahbub; Liu, Yuh Shiuan; Kao, Tsung Ting et al.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 3-4, 04.2014, p. 828-831.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications

AU - Satter, Md Mahbub

AU - Liu, Yuh Shiuan

AU - Kao, Tsung Ting

AU - Lochner, Zachary

AU - Li, Xiaohang

AU - Ryou, Jae Hyun

AU - Shen, Shyh Chiang

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Yoder, P. Douglas

PY - 2014/4

Y1 - 2014/4

N2 - Achieving high p-type conductivity is one of the most significant bottlenecks to the efficient operation of wurtzite III-N based optoelectronic and microelectronic devices. Through judicious volumetric redistribution of fixed negative polarization charge, compositionally graded layers may be exploited to achieve nearly flat valence band profiles free from electrostatic barriers to hole injection into the active region. This may potentially ameliorate problems associated with poor p-type conductivity and inefficient hole transport that complicates the design of DUV laser diodes and light emitting diodes.

AB - Achieving high p-type conductivity is one of the most significant bottlenecks to the efficient operation of wurtzite III-N based optoelectronic and microelectronic devices. Through judicious volumetric redistribution of fixed negative polarization charge, compositionally graded layers may be exploited to achieve nearly flat valence band profiles free from electrostatic barriers to hole injection into the active region. This may potentially ameliorate problems associated with poor p-type conductivity and inefficient hole transport that complicates the design of DUV laser diodes and light emitting diodes.

KW - Deep ultraviolet

KW - Gallium nitride

KW - Laser diode

KW - Numerical simulation

UR - http://www.scopus.com/inward/record.url?scp=84898548043&partnerID=8YFLogxK

U2 - 10.1002/pssc.201300679

DO - 10.1002/pssc.201300679

M3 - Article

AN - SCOPUS:84898548043

SN - 1862-6351

VL - 11

SP - 828

EP - 831

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

ER -

Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications

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