Abstract
The high speed, scalability, and parallelism offered by ReRAM crossbar arrays foster the development of ReRAM-based next-generation AI accelerators. At the same time, the sensitivity of ReRAM to temperature variations decreases RON ROFF ratio and negatively affects the achieved accuracy and reliability of the hardware. Various works on temperature-aware optimization and remapping in ReRAM crossbar arrays reported up to 58% improvement in accuracy and 2.39× ReRAM lifetime enhancement. This paper classifies the challenges caused by thermal heat, starting from constraints in ReRAM cells' dimensions and characteristics to their placement in the architecture. In addition, it reviews the available solutions designed to mitigate the impact of these challenges, including emerging temperature-resilient Deep Neural Network (DNN) training methods. Our work also provides a summary of the techniques and their advantages and limitations.
Original language | English (US) |
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Pages (from-to) | 28-41 |
Number of pages | 14 |
Journal | IEEE Open Journal of Circuits and Systems |
Volume | 5 |
DOIs | |
State | Published - 2024 |
Keywords
- memristor
- nonideality
- ReRAM
- resistive crossbar arrays
- resistive hardware accelerators
- thermal heating
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Signal Processing
- Electronic, Optical and Magnetic Materials