TY - JOUR
T1 - Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications
AU - Oh, Seung Kyu
AU - Lundh, James Spencer
AU - Shervin, Shahab
AU - Chatterjee, Bikramjit
AU - Lee, Dong Kyu
AU - Choi, Sukwon
AU - Kwak, Joon Seop
AU - Ryou, Jae-Hyun
N1 - KAUST Repository Item: Exported on 2021-03-12
Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02
Acknowledgements: The work at the University of Houston is supported by the IT R&D Program of Korean Ministry of Trade, Industry, and Energy (MOTIE)/Korea Evaluation Institute of Technology (KEIT) (Grant No. 10048933, Development of Epitaxial Structure Design and Epitaxial Growth System for High-Voltage Power Semiconductors) and King Abdullah University of Science and Technology (KAUST) (Contract No. OSR-2017-CRG6-3437.02). J.H.R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). The work at SCNU was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF- 2014R1A6A1030419) and the Korea Evaluation Institute of Industrial Technology, Development of Core Technologies for Transportation Systems funded by the Ministry of Trade, Industry and Energy (10070201, Development of Smart Head Lamp of VGA resolution using Micro-LED). Funding for efforts by the Pennsylvania State University was provided by the AFOSR Young Investigator Program (Grant No. FA9550-17-1-0141, Program Officers: Dr. Michael Kendra and Dr. Brett Pokines, also monitored by Dr. Kenneth Goretta).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2019/2/25
Y1 - 2019/2/25
N2 - GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.
AB - GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.
UR - http://hdl.handle.net/10754/668072
UR - https://asmedigitalcollection.asme.org/electronicpackaging/article/doi/10.1115/1.4041813/368415/Thermal-Management-and-Characterization-of
UR - http://www.scopus.com/inward/record.url?scp=85062635071&partnerID=8YFLogxK
U2 - 10.1115/1.4041813
DO - 10.1115/1.4041813
M3 - Article
SN - 1043-7398
VL - 141
JO - Journal of Electronic Packaging
JF - Journal of Electronic Packaging
IS - 2
ER -