TY - JOUR
T1 - Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)
AU - Hussain, Aftab M.
AU - Fahad, Hossain M.
AU - Sevilla, Galo T.
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).
PY - 2013/8/16
Y1 - 2013/8/16
N2 - We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/562910
UR - http://doi.wiley.com/10.1002/pssr.201308019
UR - http://www.scopus.com/inward/record.url?scp=84888009448&partnerID=8YFLogxK
U2 - 10.1002/pssr.201308019
DO - 10.1002/pssr.201308019
M3 - Article
SN - 1862-6254
VL - 7
SP - 966
EP - 970
JO - physica status solidi (RRL) - Rapid Research Letters
JF - physica status solidi (RRL) - Rapid Research Letters
IS - 11
ER -