Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

H. N. Alshareef; H. R. Harris; H. C. Wen; C. S. Park; C. Huffman; K. Choi; H. F. Luan; P. Majhi; B. H. Lee; R. Jammy; D. J. Lichtenwalner; J. S. Jur; A. I. Kingon

Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

H. N. Alshareef, H. R. Harris, H. C. Wen, C. S. Park, C. Huffman, K. Choi, H. F. Luan, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

59 Scopus citations

Abstract

We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La₂O₃, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with L_g down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO₂ mobility, and T _inv∼1.6nm.

Original language	English (US)
Title of host publication	2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages	7-8
Number of pages	2
State	Published - 2006
Externally published	Yes
Event	2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: Jun 13 2006 → Jun 15 2006

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2006 Symposium on VLSI Technology, VLSIT
Country/Territory	United States
City	Honolulu, HI
Period	06/13/06 → 06/15/06

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Alshareef, H. N., Harris, H. R., Wen, H. C., Park, C. S., Huffman, C., Choi, K., Luan, H. F., Majhi, P., Lee, B. H., Jammy, R., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. (2006). Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 7-8). Article 1705190 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{4d95d992ffcf4e8c9882317e6a30318d,

title = "Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric",

abstract = "We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and T inv∼1.6nm.",

author = "Alshareef, {H. N.} and Harris, {H. R.} and Wen, {H. C.} and Park, {C. S.} and C. Huffman and K. Choi and Luan, {H. F.} and P. Majhi and Lee, {B. H.} and R. Jammy and Lichtenwalner, {D. J.} and Jur, {J. S.} and Kingon, {A. I.}",

year = "2006",

language = "English (US)",

isbn = "1424400058",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "7--8",

booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",

note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",

}

Alshareef, HN, Harris, HR, Wen, HC, Park, CS, Huffman, C, Choi, K, Luan, HF, Majhi, P, Lee, BH, Jammy, R, Lichtenwalner, DJ, Jur, JS & Kingon, AI 2006, Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705190, Digest of Technical Papers - Symposium on VLSI Technology, pp. 7-8, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 06/13/06.

Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric. / Alshareef, H. N.; Harris, H. R.; Wen, H. C. et al.
2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 7-8 1705190 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

AU - Alshareef, H. N.

AU - Harris, H. R.

AU - Wen, H. C.

AU - Park, C. S.

AU - Huffman, C.

AU - Choi, K.

AU - Luan, H. F.

AU - Majhi, P.

AU - Lee, B. H.

AU - Jammy, R.

AU - Lichtenwalner, D. J.

AU - Jur, J. S.

AU - Kingon, A. I.

PY - 2006

Y1 - 2006

N2 - We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and T inv∼1.6nm.

AB - We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and T inv∼1.6nm.

UR - http://www.scopus.com/inward/record.url?scp=41149169700&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:41149169700

SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 7

EP - 8

BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

T2 - 2006 Symposium on VLSI Technology, VLSIT

Y2 - 13 June 2006 through 15 June 2006

ER -

Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

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