Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

Keyphrases

• Dielectric 100%
• Metal Gate 100%
• MOSFET 100%
• Thermally Stable 100%
• HfSiO 100%
• Silica 50%
• Transistor 50%
• Effective Work Function 50%
• Threshold Voltage 50%
• Conduction Band Edge 50%
• La2O3 50%
• Surface Passivation 50%
• Well-behaved 50%

Material Science

• Dielectric Material 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Physical Vapor Deposition 50%
• Surface Passivation 50%
• Transistor 50%
• Molecular Beam Epitaxy 50%