Abstract
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al0.83 In0.17 N alloy exhibited thermal conductivity of 4.87 W/(m K) measured by 3ω differential method. The Seebeck coefficient of n-Al0.83 In0.17 N was measured as-6.012× 10-4 V/K by thermal gradient method. The sheet resistivity of n-Al0.83 In0.17 N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38× 104/( m). The thermoelectric figure of merit (Z T) of n-type Al0.83 In0.17 N was measured as 0.532 at room temperature (T=300 K). The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.
Original language | English (US) |
---|---|
Article number | 112105 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 11 |
DOIs | |
State | Published - Sep 13 2010 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)