@inproceedings{3187ac7e0ecb461387af4c503ba76245,
title = "Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions",
abstract = "Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11 % up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor.",
keywords = "AlInN, MOVPE, Seebeck Coefficient, Thermoelectric",
author = "Jing Zhang and Hua Tong and Guangyu Liu and Herbsommer, {Juan A.} and Huang, {G. S.} and Nelson Tansu",
year = "2011",
doi = "10.1117/12.875125",
language = "English (US)",
isbn = "9780819484765",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VI",
note = "Gallium Nitride Materials and Devices VI ; Conference date: 24-01-2011 Through 27-01-2011",
}