TY - JOUR
T1 - Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors
AU - Quevedo-López, Manuel Angel Quevedo
AU - Wondmagegn, Wudyalew T.
AU - Alshareef, Husam N.
AU - Ramírez-Bon, Rafael
AU - Gnade, Bruce E.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/6/1
Y1 - 2011/6/1
N2 - The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.
AB - The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.
UR - http://hdl.handle.net/10754/564392
UR - http://www.ingentaconnect.com/content/10.1166/jnn.2011.3425
UR - http://www.scopus.com/inward/record.url?scp=80051735058&partnerID=8YFLogxK
U2 - 10.1166/jnn.2011.3425
DO - 10.1166/jnn.2011.3425
M3 - Article
C2 - 21770215
SN - 1533-4880
VL - 11
SP - 5532
EP - 5538
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 6
ER -