Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

Abdulilah M. Mayet, Aftab M. Hussain, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.
Original languageEnglish (US)
Pages (from-to)035202
Issue number3
StatePublished - Dec 4 2015


Dive into the research topics of 'Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material'. Together they form a unique fingerprint.

Cite this