Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

Abdulilah M. Mayet; Aftab M. Hussain; Muhammad Mustafa Hussain

doi:10.1088/0957-4484/27/3/035202

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

Abdulilah M. Mayet, Aftab M. Hussain, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Original language	English (US)
Pages (from-to)	035202
Journal	Nanotechnology
Volume	27
Issue number	3
DOIs	https://doi.org/10.1088/0957-4484/27/3/035202
State	Published - Dec 4 2015

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title = "Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material",

abstract = "{\textcopyright} 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.",

author = "Mayet, {Abdulilah M.} and Hussain, {Aftab M.} and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): GRP-CF-2011-08-S, CRG-1-2012-HUS-008 Acknowledgements: We are very grateful to Professor Tsu-Jae King Liu of the University of California at Berkeley for the valuable feedbacks regarding this manuscript. AM was partially supported by KAUST OCRF Award No. GRP-CF-2011-08-S and AMH is supported under KAUST OCRF CRG-1-2012-HUS-008. MMH directed the work. AM worked on fabrication and measured data. AMH worked on the analysis. All authors have given approval to the final version of the manuscript.",

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T1 - Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

AU - Mayet, Abdulilah M.

AU - Hussain, Aftab M.

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): GRP-CF-2011-08-S, CRG-1-2012-HUS-008 Acknowledgements: We are very grateful to Professor Tsu-Jae King Liu of the University of California at Berkeley for the valuable feedbacks regarding this manuscript. AM was partially supported by KAUST OCRF Award No. GRP-CF-2011-08-S and AMH is supported under KAUST OCRF CRG-1-2012-HUS-008. MMH directed the work. AM worked on fabrication and measured data. AMH worked on the analysis. All authors have given approval to the final version of the manuscript.

PY - 2015/12/4

Y1 - 2015/12/4

N2 - © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

AB - © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

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U2 - 10.1088/0957-4484/27/3/035202

DO - 10.1088/0957-4484/27/3/035202

M3 - Article

SN - 0957-4484

VL - 27

SP - 035202

JO - Nanotechnology

JF - Nanotechnology

IS - 3

ER -

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

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