The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Number of pages||3|
|State||Published - Aug 26 2010|
ASJC Scopus subject areas
- Condensed Matter Physics