Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish (US)
Title of host publicationPhysica Status Solidi (C) Current Topics in Solid State Physics
Pages1980-1982
Number of pages3
DOIs
StatePublished - Aug 26 2010
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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