TY - GEN
T1 - Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate
AU - Sugiyama, T.
AU - Iida, D.
AU - Iwaya, M.
AU - Kamiyama, S.
AU - Amano, H.
AU - Akasaki, I.
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2010/8/26
Y1 - 2010/8/26
N2 - The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
AB - The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200983595
UR - http://www.scopus.com/inward/record.url?scp=77955798064&partnerID=8YFLogxK
U2 - 10.1002/pssc.200983595
DO - 10.1002/pssc.200983595
M3 - Conference contribution
SP - 1980
EP - 1982
BT - Physica Status Solidi (C) Current Topics in Solid State Physics
ER -