Thresholds of quasi-supercontinuum interband quantum dot lasers

C. L. Tan; Y. Wang; H. S. Djie; Boon Ooi

doi:10.1007/s11082-009-9277-2

Thresholds of quasi-supercontinuum interband quantum dot lasers

C. L. Tan, Y. Wang, H. S. Djie, Boon Ooi

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

Original language	English (US)
Pages (from-to)	1227-1231
Number of pages	5
Journal	Optical and Quantum Electronics
Volume	40
Issue number	14-15 SPEC. ISS.
DOIs	https://doi.org/10.1007/s11082-009-9277-2
State	Published - Nov 1 2008

Keywords

Broadband
Inhomogeneous broadening
Quantum-dot
Semiconductor laser
Superscontinuum

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1007/s11082-009-9277-2

Cite this

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abstract = "We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.",

keywords = "Broadband, Inhomogeneous broadening, Quantum-dot, Semiconductor laser, Superscontinuum",

author = "Tan, {C. L.} and Y. Wang and Djie, {H. S.} and Boon Ooi",

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AU - Tan, C. L.

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, Boon

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N2 - We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

AB - We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

KW - Broadband

KW - Inhomogeneous broadening

KW - Quantum-dot

KW - Semiconductor laser

KW - Superscontinuum

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Thresholds of quasi-supercontinuum interband quantum dot lasers

Abstract

Keywords

ASJC Scopus subject areas

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