Abstract
We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.
Original language | English (US) |
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Pages (from-to) | 1227-1231 |
Number of pages | 5 |
Journal | Optical and Quantum Electronics |
Volume | 40 |
Issue number | 14-15 SPEC. ISS. |
DOIs | |
State | Published - Nov 1 2008 |
Keywords
- Broadband
- Inhomogeneous broadening
- Quantum-dot
- Semiconductor laser
- Superscontinuum
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering