TY - JOUR
T1 - Tin - an unlikely ally for silicon field effect transistors?
AU - Hussain, Aftab M.
AU - Fahad, Hossain M.
AU - Singh, Nirpendra
AU - Sevilla, Galo T.
AU - Schwingenschlögl, Udo
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.
PY - 2014/1/13
Y1 - 2014/1/13
N2 - We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/563338
UR - http://doi.wiley.com/10.1002/pssr.201308300
UR - http://www.scopus.com/inward/record.url?scp=84898052233&partnerID=8YFLogxK
U2 - 10.1002/pssr.201308300
DO - 10.1002/pssr.201308300
M3 - Article
SN - 1862-6254
VL - 8
SP - 332
EP - 335
JO - physica status solidi (RRL) - Rapid Research Letters
JF - physica status solidi (RRL) - Rapid Research Letters
IS - 4
ER -