@inproceedings{b09cfb41fcfe4656bdd7377e1e324162,
title = "TMD FinFET with 4 nm thin body and back gate control for future low power technology",
abstract = "A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.",
author = "Chen, {Min Cheng} and Li, {Kai Shin} and Li, {Lain Jong} and Lu, {Ang Yu} and Li, {Ming Yang} and Chang, {Yung Huang} and Lin, {Chang Hsien} and Chen, {Yi Ju} and Hou, {Yun Fang} and Chen, {Chun Chi} and Wu, {Bo Wei} and Wu, {Cheng San} and Ivy Yang and Lee, {Yao Jen} and Shieh, {Jia Min} and Yeh, {Wen Kuan} and Shih, {Jyun Hong} and Su, {Po Cheng} and Sachid, {Angada B.} and Tahui Wang and Yang, {Fu Liang} and Chenming Hu",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",
year = "2015",
month = feb,
day = "16",
doi = "10.1109/IEDM.2015.7409813",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "32.2.1--32.2.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
address = "United States",
}