TY - JOUR
T1 - Topological Hall Effect in Traditional Ferromagnet Embedded with Black-Phosphorus-Like Bismuth Nanosheets
AU - Zhou, Liang
AU - Chen, Junshu
AU - Chen, Xiaobin
AU - Xi, Bin
AU - Qiu, Yang
AU - Zhang, Junwei
AU - Wang, Linjing
AU - Zhang, Runnan
AU - Ye, Bicong
AU - Chen, Pingbo
AU - Zhang, Xixiang
AU - Guo, Guo-Ping
AU - Yu, Dapeng
AU - Mei, Jia-Wei
AU - Ye, Fei
AU - Wang, Gan
AU - He, Hongtao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRF-2015-2549-CRG4
Acknowledgements: This work was supported by the National Natural Science Foundation of China (No. 11574129, 11774143, 61734008, 51404293 and 11374135, 11774300), the National Key Research and Development Program of China (No. 2016YFA0301703), the Natural Science Foundation of Guangdong Province (No. 2015A030313840, and 2017A030313033), the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201602), Technology and Innovation Commission of Shenzhen Municipality (No. JCYJ20160531190254691, JCYJ20160531190535310, KQJSCX20170727090712763, ZDSYS201703031659262, and JCYJ20170412152334605). J.W.M
was partially supported by the program for Guangdong Introducing Innovative and Entrepreneurial Teams (No. 2017ZT07C062). J. Zhang and X. Zhang were supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No: CRF-2015-2549-CRG4.
PY - 2020/4/27
Y1 - 2020/4/27
N2 - Topological Hall effect is an abnormal Hall response arising from the scalar spin chirality of chiral magnetic textures. Up to now, such an effect is only observed in certain special materials, but rarely in traditional ferromagnets. In this work, we have implemented the molecular beam epitaxy technique to successfully embed black-phosphorus-like bismuth nanosheets with strong spin orbit
coupling into the bulk of chromium telluride Cr2Te3, as evidenced by atomically resolved energy dispersive X-ray spectroscopy mapping. Distinctive from pristine Cr2Te3, these Bi-embedded Cr2Te3 epitaxial films exhibit not only pronounced topological Hall effects, but also magnetoresistivity anomalies and differential magnetic susceptibility plateaus. All these experimental features point to the possible emergence of magnetic skyrmions in Bi-embedded Cr2Te3, which is further supported by our numerical simulations with all input parameters obtained from the first-principle calculations. Therefore, our work demonstrates a new efficient way to induce skyrmions in ferromagnets, as well as the topological Hall effect by embedding nanosheets with strong spin-orbit couplings.
AB - Topological Hall effect is an abnormal Hall response arising from the scalar spin chirality of chiral magnetic textures. Up to now, such an effect is only observed in certain special materials, but rarely in traditional ferromagnets. In this work, we have implemented the molecular beam epitaxy technique to successfully embed black-phosphorus-like bismuth nanosheets with strong spin orbit
coupling into the bulk of chromium telluride Cr2Te3, as evidenced by atomically resolved energy dispersive X-ray spectroscopy mapping. Distinctive from pristine Cr2Te3, these Bi-embedded Cr2Te3 epitaxial films exhibit not only pronounced topological Hall effects, but also magnetoresistivity anomalies and differential magnetic susceptibility plateaus. All these experimental features point to the possible emergence of magnetic skyrmions in Bi-embedded Cr2Te3, which is further supported by our numerical simulations with all input parameters obtained from the first-principle calculations. Therefore, our work demonstrates a new efficient way to induce skyrmions in ferromagnets, as well as the topological Hall effect by embedding nanosheets with strong spin-orbit couplings.
UR - http://hdl.handle.net/10754/662717
UR - https://pubs.acs.org/doi/10.1021/acsami.0c04447
UR - http://www.scopus.com/inward/record.url?scp=85085897257&partnerID=8YFLogxK
U2 - 10.1021/acsami.0c04447
DO - 10.1021/acsami.0c04447
M3 - Article
C2 - 32338493
SN - 1944-8244
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
ER -