Torsion based universal MEMS logic device

Saad Ilyas; Armando Arpys Arevalo Carreno; Ernesto Bayes; Ian G. Foulds; Mohammad I. Younis

doi:10.1016/j.sna.2015.10.039

Torsion based universal MEMS logic device

Saad Ilyas, Armando Arpys Arevalo Carreno, Ernesto Bayes, Ian G. Foulds, Mohammad I. Younis

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

Original language	English (US)
Pages (from-to)	150-158
Number of pages	9
Journal	Sensors and Actuators A: Physical
Volume	236
DOIs	https://doi.org/10.1016/j.sna.2015.10.039 https://doi.org/10.1115/DETC2015-47409
State	Published - Nov 3 2015

ASJC Scopus subject areas

Instrumentation
Surfaces, Coatings and Films
Metals and Alloys
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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https://repository.kaust.edu.sa/bitstream/10754/581766/1/1-s2.0-S0924424715302004-main.pdf

Cite this

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title = "Torsion based universal MEMS logic device",

abstract = "In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.",

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AU - Carreno, Armando Arpys Arevalo

AU - Bayes, Ernesto

AU - Foulds, Ian G.

AU - Younis, Mohammad I.

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AB - In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

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Torsion based universal MEMS logic device

Abstract

ASJC Scopus subject areas

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