Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

Amir Abdallah; Ounsi El Daif; Brahim Aïssa; Maulid Kivambe; Nouar Tabet; Johannes Seif; Jan Haschke; Jean Cattin; Mathieu Boccard; Stefaan De Wolf; Christophe Ballif

doi:10.1016/j.egypro.2017.09.307

Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

Amir Abdallah, Ounsi El Daif, Brahim Aïssa, Maulid Kivambe, Nouar Tabet, Johannes Seif, Jan Haschke, Jean Cattin, Mathieu Boccard, Stefaan De Wolf, Christophe Ballif

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

Original language	English (US)
Pages (from-to)	331-337
Number of pages	7
Journal	Energy Procedia
Volume	124
DOIs	https://doi.org/10.1016/j.egypro.2017.09.307
State	Published - Sep 22 2017

Access to Document

10.1016/j.egypro.2017.09.307

https://repository.kaust.edu.sa/bitstream/10754/625977/1/1-s2.0-S1876610217342789-main.pdf

Cite this

@article{98e140a968414198b598faeb63a0facc,

title = "Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment",

abstract = "We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.",

author = "Amir Abdallah and Daif, {Ounsi El} and Brahim A{\"i}ssa and Maulid Kivambe and Nouar Tabet and Johannes Seif and Jan Haschke and Jean Cattin and Mathieu Boccard and {De Wolf}, Stefaan and Christophe Ballif",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work has been carried out within the Qatar Environment and Energy Research Institute (QEERI) and Ecole Polytechnique F{\'e}d{\'e}rale de Lausanne (EPFL), Photovoltaics and Thin-Film Electronics Laboratory (PV-lab) collaboration.",

year = "2017",

month = sep,

day = "22",

doi = "10.1016/j.egypro.2017.09.307",

language = "English (US)",

volume = "124",

pages = "331--337",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

AU - Abdallah, Amir

AU - Daif, Ounsi El

AU - Aïssa, Brahim

AU - Kivambe, Maulid

AU - Tabet, Nouar

AU - Seif, Johannes

AU - Haschke, Jan

AU - Cattin, Jean

AU - Boccard, Mathieu

AU - De Wolf, Stefaan

AU - Ballif, Christophe

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work has been carried out within the Qatar Environment and Energy Research Institute (QEERI) and Ecole Polytechnique Fédérale de Lausanne (EPFL), Photovoltaics and Thin-Film Electronics Laboratory (PV-lab) collaboration.

PY - 2017/9/22

Y1 - 2017/9/22

N2 - We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

AB - We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

UR - http://hdl.handle.net/10754/625977

UR - http://www.sciencedirect.com/science/article/pii/S1876610217342789

UR - http://www.scopus.com/inward/record.url?scp=85031903179&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2017.09.307

DO - 10.1016/j.egypro.2017.09.307

M3 - Article

SN - 1876-6102

VL - 124

SP - 331

EP - 337

JO - Energy Procedia

JF - Energy Procedia

ER -

Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

Abstract

Access to Document

Other files and links

Fingerprint

Cite this