TY - JOUR
T1 - Towards neuromorphic electronics: Memristors on foldable silicon fabric
AU - Ghoneim, Mohamed T.
AU - Zidan, Mohammed A.
AU - Salama, Khaled N.
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2014/11
Y1 - 2014/11
N2 - The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.
AB - The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.
UR - http://hdl.handle.net/10754/563834
UR - https://linkinghub.elsevier.com/retrieve/pii/S0026269214002304
UR - http://www.scopus.com/inward/record.url?scp=84915826056&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2014.07.011
DO - 10.1016/j.mejo.2014.07.011
M3 - Article
SN - 0026-2692
VL - 45
SP - 1392
EP - 1395
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 11
ER -