TY - JOUR
T1 - Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes
AU - Shushanian, Artem
AU - Iida, Daisuke
AU - Han, Yu
AU - Ohkawa, Kazuhiro
N1 - KAUST Repository Item: Exported on 2023-08-07
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). We would like to show our gratitude to the staff of the KAUST Analytical Core Lab, in particular Andrei Zybinskii, for their help with the ICP-MS calibration and measurements.
PY - 2023/8/2
Y1 - 2023/8/2
N2 - We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.
AB - We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.
UR - http://hdl.handle.net/10754/693466
UR - http://pubs.rsc.org/en/Content/ArticleLanding/2023/CC/D3CC03387B
U2 - 10.1039/d3cc03387b
DO - 10.1039/d3cc03387b
M3 - Article
C2 - 37554101
SN - 1359-7345
JO - CHEMICAL COMMUNICATIONS
JF - CHEMICAL COMMUNICATIONS
ER -
