Abstract
We have performed transient capacitance measurements on indium tin oxide/poly(p-phenylenevinylene)/A1 diodes which have a depletion region type Schottky barrier at the polymer/A1 interface. We show that both the transport and trap state distributions within the polymer can be determined from the results and present a fully consistent model that describes the observed behaviour in terms of a de-trapping of carriers from a discrete trap level to a Gaussian distribution of transport states. © 2000 Elsevier Science B.V. All rights reserved.
Original language | English (US) |
---|---|
Journal | Organic Electronics |
Volume | 1 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2000 |
Externally published | Yes |