Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi; A. H. Reading; D. A. Cohen; R. M. Farrell; S. Nakamura; J. S. Speck; S. P. DenBaars

doi:10.1063/1.4960791

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, S. P. DenBaars

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

Original language	English (US)
Pages (from-to)	061109
Journal	Applied Physics Letters
Volume	109
Issue number	6
DOIs	https://doi.org/10.1063/1.4960791
State	Published - Aug 11 2016
Externally published	Yes

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title = "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes",

abstract = "The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.",

author = "A. Myzaferi and Reading, {A. H.} and Cohen, {D. A.} and Farrell, {R. M.} and S. Nakamura and Speck, {J. S.} and DenBaars, {S. P.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

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doi = "10.1063/1.4960791",

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AU - Myzaferi, A.

AU - Reading, A. H.

AU - Cohen, D. A.

AU - Farrell, R. M.

AU - Nakamura, S.

AU - Speck, J. S.

AU - DenBaars, S. P.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/8/11

Y1 - 2016/8/11

N2 - The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

AB - The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

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