TY - GEN
T1 - Transport and structural characterization of solution-processable doped ZnO nanowires
AU - Noriega, Rodrigo
AU - Goris, Ludwig
AU - Rivnay, Jonathan
AU - Scholl, Jonathan
AU - Thompson, Linda M.
AU - Palke, Aaron C.
AU - Stebbins, Jonathan F.
AU - Salleo, Alberto
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST): Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2009/8/18
Y1 - 2009/8/18
N2 - The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
AB - The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
UR - http://hdl.handle.net/10754/623612
UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.826204
UR - http://www.scopus.com/inward/record.url?scp=70349897076&partnerID=8YFLogxK
U2 - 10.1117/12.826204
DO - 10.1117/12.826204
M3 - Conference contribution
SN - 9780819477019
BT - Nanoscale Photonic and Cell Technologies for Photovoltaics II
PB - SPIE-Intl Soc Optical Eng
ER -