TY - JOUR
T1 - Triarylphosphine Oxide as Cathode Interfacial Material for Inverted Perovskite Solar Cells
AU - Wang, Kai
AU - Neophytou, Marios
AU - Aydin, Erkan
AU - Wang, Mingcong
AU - Laurent, Thomas
AU - Harrison, George T.
AU - Liu, Jiang
AU - Liu, Wenzhu
AU - de Bastiani, Michele
AU - Khan, Jafar Iqbal
AU - Anthopoulos, Thomas D.
AU - Laquai, Frédéric
AU - De Wolf, Stefaan
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CARF URF/1/3079-33-01, URF/1/3079-35-01, URF/1/3079-36-01, URF/1/3079-37-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) under Award No. OSR-CARF URF/1/3079-33-01, URF/1/3079-35-01, URF/1/3079-36-01, and URF/1/3079-37-01.
PY - 2019/5/8
Y1 - 2019/5/8
N2 - Metal halide perovskite solar cells (PSCs) in the inverted planar p-i-n configuration often employ phenyl-C61-butyric acid methyl ester (PC61BM) as electron transport layer, onto which Ag is deposited as outer electrode. However, the energy offset between PC61BM and Ag imposes an energy barrier for electron extraction. In this work, to improve the contact quality of this stack, a small organic molecule (2-(1,10-phenanthrolin-3-yl)naphth-6-yl)diphenylphosphine oxide (DPO) as a cathode interfacial material (CIM), inserted between PC61BM and Ag, is introduced. In devices with the indium tin oxide (ITO)/NiOx/methylammonium lead iodide (MAPbI3)/PC61BM/CIM/Ag configuration, it is found that this results in fill factor (FF) and short-circuit current density values (JSC) that are up to ≈34% and ≈1 mA cm−2 higher, respectively, compared to DPO-free devices. Inserting additional thin ZnO nanoparticle layers further improves the contact quality, leading to a power conversion efficiency of 18.2%. Semitransparent PSCs, utilizing DPO as an interlayer buffer layer are also realised. Resultant devices exhibit improved performance compared to DPO-free devices. This proves that DPO withstands the sputtering of ITO, and may thus find application in perovskite-based tandem devices. It is concluded that DPO acts as an excellent cathode modifier, opening new device-engineering opportunities for p-i-n PSCs, especially in their semitransparent implementation.
AB - Metal halide perovskite solar cells (PSCs) in the inverted planar p-i-n configuration often employ phenyl-C61-butyric acid methyl ester (PC61BM) as electron transport layer, onto which Ag is deposited as outer electrode. However, the energy offset between PC61BM and Ag imposes an energy barrier for electron extraction. In this work, to improve the contact quality of this stack, a small organic molecule (2-(1,10-phenanthrolin-3-yl)naphth-6-yl)diphenylphosphine oxide (DPO) as a cathode interfacial material (CIM), inserted between PC61BM and Ag, is introduced. In devices with the indium tin oxide (ITO)/NiOx/methylammonium lead iodide (MAPbI3)/PC61BM/CIM/Ag configuration, it is found that this results in fill factor (FF) and short-circuit current density values (JSC) that are up to ≈34% and ≈1 mA cm−2 higher, respectively, compared to DPO-free devices. Inserting additional thin ZnO nanoparticle layers further improves the contact quality, leading to a power conversion efficiency of 18.2%. Semitransparent PSCs, utilizing DPO as an interlayer buffer layer are also realised. Resultant devices exhibit improved performance compared to DPO-free devices. This proves that DPO withstands the sputtering of ITO, and may thus find application in perovskite-based tandem devices. It is concluded that DPO acts as an excellent cathode modifier, opening new device-engineering opportunities for p-i-n PSCs, especially in their semitransparent implementation.
UR - http://hdl.handle.net/10754/656096
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.201900434
UR - http://www.scopus.com/inward/record.url?scp=85065928099&partnerID=8YFLogxK
U2 - 10.1002/admi.201900434
DO - 10.1002/admi.201900434
M3 - Article
SN - 2196-7350
VL - 6
SP - 1900434
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 12
ER -