Abstract
Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by reducing the threading dislocation density, from 7 × 107 to 3 × 106−2.
Original language | English (US) |
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Title of host publication | Optics InfoBase Conference Papers |
Publisher | Optica Publishing Group (formerly OSA) |
ISBN (Print) | 9781943580576 |
DOIs | |
State | Published - Jan 1 2019 |
Externally published | Yes |