Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles

Mohamad I. Nugraha; Hiroyuki Matsui; Satria Z. Bisri; Mykhailo Sytnyk; Wolfgang Heiss; Maria A. Loi; Jun Takeya

doi:10.1063/1.4966208

Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles

Mohamad I. Nugraha, Hiroyuki Matsui, Satria Z. Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria A. Loi, Jun Takeya

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We study the effect of self-assembled monolayer (SAM) treatment of the SiO₂ dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO₂ surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.

Original language	English (US)
Article number	116105
Journal	APL MATERIALS
Volume	4
Issue number	11
DOIs	https://doi.org/10.1063/1.4966208
State	Published - Nov 1 2016

ASJC Scopus subject areas

General Materials Science
General Engineering

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10.1063/1.4966208

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title = "Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles",

abstract = "We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.",

author = "Nugraha, {Mohamad I.} and Hiroyuki Matsui and Bisri, {Satria Z.} and Mykhailo Sytnyk and Wolfgang Heiss and Loi, {Maria A.} and Jun Takeya",

note = "Funding Information: This work was partly supported by the European Research Council (ERC) Starting Grant (No. 306983) Hybrid solution processable materials for opto-electronic devices (ERC-HySPOD). W.H. and M.S. gratefully acknowledge the use of the services and facilities of the Energie Campus Nurnberg and financial support through the Aufbruch Bayern initiative of the State of Bavaria. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Nugraha, Mohamad I.

AU - Matsui, Hiroyuki

AU - Bisri, Satria Z.

AU - Sytnyk, Mykhailo

AU - Heiss, Wolfgang

AU - Loi, Maria A.

AU - Takeya, Jun

N1 - Funding Information: This work was partly supported by the European Research Council (ERC) Starting Grant (No. 306983) Hybrid solution processable materials for opto-electronic devices (ERC-HySPOD). W.H. and M.S. gratefully acknowledge the use of the services and facilities of the Energie Campus Nurnberg and financial support through the Aufbruch Bayern initiative of the State of Bavaria. Publisher Copyright: © 2016 Author(s).

PY - 2016/11/1

Y1 - 2016/11/1

N2 - We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.

AB - We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.

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Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles

Abstract

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