Tuning magnetoresistance and exchange coupling in ZnO by doping transition metals

Yu Feng Tian; Yong Feng Li; Tom Wu

doi:10.1063/1.3664116

Tuning magnetoresistance and exchange coupling in ZnO by doping transition metals

Yu Feng Tian, Yong Feng Li, Tom Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

A systematic study focused on the magneto-transport properties of transition metal (Cu or Co) doped ZnO thin films is performed to elucidate the role of doping on tuning the band structure and exchange coupling in wide band gap oxides. Detailed theoretical fittings suggest that the negative magnetoresistance (MR) originates from the spin-dependent scattering due to the high-order sp-d exchange interaction, while the positive MR can be well described by a model invoking two spin split subbands. Our results suggest that with different dopants both the electronic band structure and the exchange coupling in ZnO can be rationally tailored.

Original language	English (US)
Article number	222503
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3664116
State	Published - Nov 28 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A systematic study focused on the magneto-transport properties of transition metal (Cu or Co) doped ZnO thin films is performed to elucidate the role of doping on tuning the band structure and exchange coupling in wide band gap oxides. Detailed theoretical fittings suggest that the negative magnetoresistance (MR) originates from the spin-dependent scattering due to the high-order sp-d exchange interaction, while the positive MR can be well described by a model invoking two spin split subbands. Our results suggest that with different dopants both the electronic band structure and the exchange coupling in ZnO can be rationally tailored.",

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AU - Li, Yong Feng

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AB - A systematic study focused on the magneto-transport properties of transition metal (Cu or Co) doped ZnO thin films is performed to elucidate the role of doping on tuning the band structure and exchange coupling in wide band gap oxides. Detailed theoretical fittings suggest that the negative magnetoresistance (MR) originates from the spin-dependent scattering due to the high-order sp-d exchange interaction, while the positive MR can be well described by a model invoking two spin split subbands. Our results suggest that with different dopants both the electronic band structure and the exchange coupling in ZnO can be rationally tailored.

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Tuning magnetoresistance and exchange coupling in ZnO by doping transition metals

Abstract

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