Twin-variant reorientation-induced large magnetoresistance effect in Ni50 Mn29 Ga21 single crystal

Min Zeng; Siu Wing Or; Zhiyong Zhu; S. L. Ho

doi:10.1063/1.3480794

Twin-variant reorientation-induced large magnetoresistance effect in Ni₅₀ Mn₂₉ Ga₂₁ single crystal

Min Zeng^*, Siu Wing Or, Zhiyong Zhu, S. L. Ho

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni₅₀ Mn₂₉ Ga₂₁ single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ∼25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°.

Original language	English (US)
Article number	053716
Journal	Journal of Applied Physics
Volume	108
Issue number	5
DOIs	https://doi.org/10.1063/1.3480794
State	Published - Sep 1 2010

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Twin-variant reorientation-induced large magnetoresistance effect in Ni50 Mn29 Ga21 single crystal",

abstract = "We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni50 Mn29 Ga21 single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ∼25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°.",

author = "Min Zeng and Or, {Siu Wing} and Zhiyong Zhu and Ho, {S. L.}",

note = "Funding Information: This work was supported by the Research Grants Council of the HKSAR Government under Grant No. PolyU 5257/06E and The Hong Kong Polytechnic University under Grant No. A-PA3C.",

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T1 - Twin-variant reorientation-induced large magnetoresistance effect in Ni50 Mn29 Ga21 single crystal

AU - Zeng, Min

AU - Or, Siu Wing

AU - Zhu, Zhiyong

AU - Ho, S. L.

N1 - Funding Information: This work was supported by the Research Grants Council of the HKSAR Government under Grant No. PolyU 5257/06E and The Hong Kong Polytechnic University under Grant No. A-PA3C.

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Y1 - 2010/9/1

N2 - We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni50 Mn29 Ga21 single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ∼25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°.

AB - We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni50 Mn29 Ga21 single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ∼25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°.

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Twin-variant reorientation-induced large magnetoresistance effect in Ni₅₀ Mn₂₉ Ga₂₁ single crystal

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