UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza; M. Porti; M. Nafría; X. Aymerich; E. Whittaker; B. Hamilton

doi:10.1016/j.microrel.2010.07.049

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

34 Scopus citations

Abstract

In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). © 2010 Elsevier Ltd. All rights reserved.

Original language	English (US)
Title of host publication	Microelectronics Reliability
Pages	1312-1315
Number of pages	4
DOIs	https://doi.org/10.1016/j.microrel.2010.07.049
State	Published - Sep 1 2010
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Condensed Matter Physics

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10.1016/j.microrel.2010.07.049

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abstract = "In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). {\textcopyright} 2010 Elsevier Ltd. All rights reserved.",

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AU - Lanza, M.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Whittaker, E.

AU - Hamilton, B.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2010/9/1

Y1 - 2010/9/1

N2 - In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). © 2010 Elsevier Ltd. All rights reserved.

AB - In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). © 2010 Elsevier Ltd. All rights reserved.

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M3 - Conference contribution

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EP - 1315

BT - Microelectronics Reliability

ER -

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

Abstract

ASJC Scopus subject areas

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