Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Mohamed T. Ghoneim; Nasir Alfaraj; Galo T. Sevilla; Muhammad Mustafa Hussain

doi:10.1109/NANO.2015.7388905

Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Mohamed T. Ghoneim, Nasir Alfaraj, Galo T. Sevilla, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

Original language	English (US)
Title of host publication	2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1422-1425
Number of pages	4
ISBN (Print)	9781467381567
DOIs	https://doi.org/10.1109/NANO.2015.7388905
State	Published - Feb 3 2016

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10.1109/NANO.2015.7388905

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title = "Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET",

abstract = "Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.",

author = "Ghoneim, {Mohamed T.} and Nasir Alfaraj and Sevilla, {Galo T.} and Hussain, {Muhammad Mustafa}",

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doi = "10.1109/NANO.2015.7388905",

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Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET. / Ghoneim, Mohamed T.; Alfaraj, Nasir; Sevilla, Galo T. et al.
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 1422-1425.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Alfaraj, Nasir

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AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01

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N2 - Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

AB - Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

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PB - Institute of Electrical and Electronics Engineers (IEEE)

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Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

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