@inproceedings{e29f6fddb7b54839a32e51462a629242,
title = "Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices",
abstract = "ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.",
author = "N. El-Atab and A. Nayfeh",
note = "Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
year = "2016",
doi = "10.1149/07205.0073ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
number = "5",
pages = "73--79",
editor = "Zavada, {J. M.} and V. Chakrapani and S. Jang and Anderson, {T. J.} and Hite, {J. K.}",
booktitle = "Wide Bandgap Semiconductor Materials and Devices 17",
address = "United States",
edition = "5",
}