Ultra-thin high quality oxynitride formed by NH3nitridation and high pressure O2Re-oxidation

T. Y. Luo; V. H.C. Watt; H. N. Al-Shareef; G. A. Brown; A. Karamcheti; Marc Jackson; H. R. Huff; B. Evans; D. L. Kwong

doi:10.1109/ESSDERC.2000.194800

Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation

T. Y. Luo^*, V. H.C. Watt, H. N. Al-Shareef, G. A. Brown, A. Karamcheti, Marc Jackson, H. R. Huff, B. Evans, D. L. Kwong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a novel technique to engineer the nitrogen profile in an ultra-thin silicon nitride-oxide gate stack is presented. It was found that the re-oxidation of silicon nitride, formed by NH₃-nitridation, in a vertical high pressure (VHP) O₂furnace effectively moves the nitrogen-rich layer toward the top interface by growing pure oxide underneath. The impact of NH3 nitridation temperature and VHP O₂re-oxidation time on gate dielectric stack thickness was also investigated.

Original language	English (US)
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE Computer Society
Pages	404-407
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194800
State	Published - 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: Sep 11 2000 → Sep 13 2000

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	09/11/00 → 09/13/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2000.194800

Cite this

Luo, T. Y., Watt, V. H. C., Al-Shareef, H. N., Brown, G. A., Karamcheti, A., Jackson, M., Huff, H. R., Evans, B., & Kwong, D. L. (2000). Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 404-407). Article 1503730 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194800

Luo, T. Y. ; Watt, V. H.C. ; Al-Shareef, H. N. et al. / Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society, 2000. pp. 404-407 (European Solid-State Device Research Conference).

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title = "Ultra-thin high quality oxynitride formed by NH3nitridation and high pressure O2Re-oxidation",

abstract = "In this paper, a novel technique to engineer the nitrogen profile in an ultra-thin silicon nitride-oxide gate stack is presented. It was found that the re-oxidation of silicon nitride, formed by NH3-nitridation, in a vertical high pressure (VHP) O2furnace effectively moves the nitrogen-rich layer toward the top interface by growing pure oxide underneath. The impact of NH3 nitridation temperature and VHP O2re-oxidation time on gate dielectric stack thickness was also investigated.",

author = "Luo, {T. Y.} and Watt, {V. H.C.} and Al-Shareef, {H. N.} and Brown, {G. A.} and A. Karamcheti and Marc Jackson and Huff, {H. R.} and B. Evans and Kwong, {D. L.}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

year = "2000",

doi = "10.1109/ESSDERC.2000.194800",

language = "English (US)",

isbn = "9782863322482",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "404--407",

editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

address = "United States",

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Luo, TY, Watt, VHC, Al-Shareef, HN, Brown, GA, Karamcheti, A, Jackson, M, Huff, HR, Evans, B & Kwong, DL 2000, Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503730, European Solid-State Device Research Conference, IEEE Computer Society, pp. 404-407, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 09/11/00. https://doi.org/10.1109/ESSDERC.2000.194800

Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation. / Luo, T. Y.; Watt, V. H.C.; Al-Shareef, H. N. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 404-407 1503730 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Brown, G. A.

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AU - Evans, B.

AU - Kwong, D. L.

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N2 - In this paper, a novel technique to engineer the nitrogen profile in an ultra-thin silicon nitride-oxide gate stack is presented. It was found that the re-oxidation of silicon nitride, formed by NH3-nitridation, in a vertical high pressure (VHP) O2furnace effectively moves the nitrogen-rich layer toward the top interface by growing pure oxide underneath. The impact of NH3 nitridation temperature and VHP O2re-oxidation time on gate dielectric stack thickness was also investigated.

AB - In this paper, a novel technique to engineer the nitrogen profile in an ultra-thin silicon nitride-oxide gate stack is presented. It was found that the re-oxidation of silicon nitride, formed by NH3-nitridation, in a vertical high pressure (VHP) O2furnace effectively moves the nitrogen-rich layer toward the top interface by growing pure oxide underneath. The impact of NH3 nitridation temperature and VHP O2re-oxidation time on gate dielectric stack thickness was also investigated.

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Luo TY, Watt VHC, Al-Shareef HN, Brown GA, Karamcheti A, Jackson M et al. Ultra-thin high quality oxynitride formed by NH₃nitridation and high pressure O₂Re-oxidation. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 404-407. 1503730. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194800