Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire

Jyh Ming Wu; Cheng Ying Chen; Yan Zhang; Kuan Hsueh Chen; Ya Yang; Youfan Hu; Hau He; Zhong Lin Wang

doi:10.1021/nn3010558

Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO ₃ nanowire/microwire

Jyh Ming Wu, Cheng Ying Chen, Yan Zhang, Kuan Hsueh Chen, Ya Yang, Youfan Hu, Hau He, Zhong Lin Wang^*

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

We demonstrated a flexible strain sensor based on ZnSnO ₃ nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO ₃ belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO ₃ revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼ 587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

Original language	English (US)
Pages (from-to)	4369-4374
Number of pages	6
Journal	ACS Nano
Volume	6
Issue number	5
DOIs	https://doi.org/10.1021/nn3010558
State	Published - May 22 2012

Keywords

Flexible
Gauge factor
Nanowires/microwires
Strain sensor
ZnSnO

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/nn3010558

Cite this

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title = "Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire",

abstract = "We demonstrated a flexible strain sensor based on ZnSnO 3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO 3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO 3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼ 587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.",

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author = "Wu, {Jyh Ming} and Chen, {Cheng Ying} and Yan Zhang and Chen, {Kuan Hsueh} and Ya Yang and Youfan Hu and Hau He and Wang, {Zhong Lin}",

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AU - Wu, Jyh Ming

AU - Chen, Cheng Ying

AU - Zhang, Yan

AU - Chen, Kuan Hsueh

AU - Yang, Ya

AU - Hu, Youfan

AU - He, Hau

AU - Wang, Zhong Lin

PY - 2012/5/22

Y1 - 2012/5/22

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AB - We demonstrated a flexible strain sensor based on ZnSnO 3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO 3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO 3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼ 587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

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