Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire

Jyh Ming Wu, Cheng Ying Chen, Yan Zhang, Kuan Hsueh Chen, Ya Yang, Youfan Hu, Hau He, Zhong Lin Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

168 Scopus citations


We demonstrated a flexible strain sensor based on ZnSnO 3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO 3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO 3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼ 587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

Original languageEnglish (US)
Pages (from-to)4369-4374
Number of pages6
JournalACS Nano
Issue number5
StatePublished - May 22 2012


  • Flexible
  • Gauge factor
  • Nanowires/microwires
  • Strain sensor
  • ZnSnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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