Ultralow doping in organic semiconductors: Evidence of trap filling

Selina Olthof*, Shafigh Mehraeen, Swagat K. Mohapatra, Stephen Barlow, Veaceslav Coropceanu, Jean Luc Brédas, Seth R. Marder, Antoine Kahn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

236 Scopus citations


Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C 60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C 60 by more than 3orders of magnitude, to reach 0.21cm2/(Vs).

Original languageEnglish (US)
Article number176601
JournalPhysical Review Letters
Issue number17
StatePublished - Oct 26 2012
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Ultralow doping in organic semiconductors: Evidence of trap filling'. Together they form a unique fingerprint.

Cite this