@inproceedings{35c5ca90cf2f4fd29d8566820003d614,
title = "Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon",
abstract = "A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.",
author = "Nasir Alfaraj and Li, {Kuang Hui} and Kang, {Chun Hong} and Laurentiu Braic and Zoita, {Nicolae Catalin} and Kiss, {Adrian Emil} and Ng, {Tien Khee} and Ooi, {Boon S.}",
note = "KAUST Repository Item: Exported on 2022-06-21 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and the Romanian Ministry of Education and Research (18N/08.02.2019). The authors acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST",
year = "2022",
month = mar,
day = "5",
doi = "10.1117/12.2608070",
language = "English (US)",
isbn = "9781510648753",
booktitle = "Oxide-based Materials and Devices XIII",
publisher = "SPIE",
}