Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

doi:10.1038/s41563-019-0489-y

Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

Original language	English (US)
Pages (from-to)	1033-1034
Number of pages	2
Journal	Nature Materials
Volume	18
Issue number	10
DOIs	https://doi.org/10.1038/s41563-019-0489-y
State	Published - Sep 19 2019

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10.1038/s41563-019-0489-y

https://repository.kaust.edu.sa/bitstream/10754/658598/1/Anthopoulos_N%26V%20Nat.%20Mater.%202019.pdf

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title = "Ultrathin channels make transistors go faster",

abstract = "Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.",

author = "Anthopoulos, {Thomas D.}",

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AB - Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

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Ultrathin channels make transistors go faster

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