TY - JOUR
T1 - Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (
AU - Young, Erin C.
AU - Yonkee, Benjamin P.
AU - Wu, Feng
AU - Saifaddin, Burhan K.
AU - Cohen, Daniel A.
AU - DenBaars, Steve P.
AU - Nakamura, Shuji
AU - Speck, James S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2015/9
Y1 - 2015/9
N2 - © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
AB - © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
UR - http://hdl.handle.net/10754/600122
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024815001785
UR - http://www.scopus.com/inward/record.url?scp=84979959755&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.02.081
DO - 10.1016/j.jcrysgro.2015.02.081
M3 - Article
SN - 0022-0248
VL - 425
SP - 389
EP - 392
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -