Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure

H. Li; K. X. Jin; S. H. Yang; J. Wang; M. He; B. C. Luo; J. Y. Wang; C. L. Chen; T. Wu

doi:10.1063/1.4759049

Ultraviolet photovoltaic effect in BiFeO ₃/Nb-SrTiO ₃ heterostructure

H. Li, K. X. Jin^*, S. H. Yang, J. Wang, M. He, B. C. Luo, J. Y. Wang, C. L. Chen, T. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on ultraviolet photovoltaic effects in a BiFeO ₃/Nb-doped SrTiO ₃ heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

Original language	English (US)
Article number	083506
Journal	Journal of Applied Physics
Volume	112
Issue number	8
DOIs	https://doi.org/10.1063/1.4759049
State	Published - Oct 15 2012
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1063/1.4759049

Cite this

@article{42751069ecb542ecad27634ab7aff78c,

title = "Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure",

abstract = "We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.",

author = "H. Li and Jin, {K. X.} and Yang, {S. H.} and J. Wang and M. He and Luo, {B. C.} and Wang, {J. Y.} and Chen, {C. L.} and T. Wu",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China (No. 61078057, 51202195 and 51172183), the Natural Science Foundation of Shaanxi Province (No. 2012JQ8013), Aviation Foundation of China (No. 2011ZF53065), Graduate Student Seed Fund (Z2012165), and NPU Foundation for Fundamental Research (Nos. JC201155, JC20110273, and JC20120246).",

year = "2012",

month = oct,

day = "15",

doi = "10.1063/1.4759049",

language = "English (US)",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Ultraviolet photovoltaic effect in BiFeO 3/Nb-SrTiO 3 heterostructure

AU - Li, H.

AU - Jin, K. X.

AU - Yang, S. H.

AU - Wang, J.

AU - He, M.

AU - Luo, B. C.

AU - Wang, J. Y.

AU - Chen, C. L.

AU - Wu, T.

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China (No. 61078057, 51202195 and 51172183), the Natural Science Foundation of Shaanxi Province (No. 2012JQ8013), Aviation Foundation of China (No. 2011ZF53065), Graduate Student Seed Fund (Z2012165), and NPU Foundation for Fundamental Research (Nos. JC201155, JC20110273, and JC20120246).

PY - 2012/10/15

Y1 - 2012/10/15

N2 - We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

AB - We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.

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VL - 112

JO - Journal of Applied Physics

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