TY - JOUR
T1 - Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
AU - Min, Jung Wook
AU - Priante, Davide
AU - Tangi, Malleswararao
AU - Liu, Guangyu
AU - Kang, Chun Hong
AU - Prabaswara, Aditya
AU - Zhao, Chao
AU - Al-Maghrabi, Latifah
AU - Alaskar, Yazeed
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - Publisher Copyright:
© The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - There have been recent research advances in AlGaN-based self-assembled nanowires (NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted molecular beam epitaxy. We review the basic growth kinetics on various foundry-compatiblemetal/ silicon-based substrates and the epistructure design for UV devices. We highlight the use of diffusion-barrier-metal thin film on silicon substrate as a solution to enhance device performance. NWs offer the opportunity to mitigate the detrimental quantum-confined Stark effect (QCSE), which lowers the recombination rate thereby reducing the device efficiency. On the other hand, the polarization-induced doping from the graded composition along NWs can be advantageous for eluding the inefficient doping in AlGaN-based UV devices. Sidewall surface states and the associate passivation treatment, as well as the use of ultrafast electron-microscopy characterization, are crucial investigations in shedding light on device performance under the influence of surface dangling bonds. For investigating the electrical performance of individual NWs and NWs light-emitting diode as a single entity, recent reports based on conductive atomic force microscopy measurements provide fast-prototyping in-process pass-fail evaluation and a means of improving growth for high-performance devices. Stress tests of NWs devices, crucial for reliable operation, are also discussed. Beyond applications in LEDs, an AlGaN-based NWs solar-blind photodetector demonstrated leveraging on the dislocation-free active region, reduced QCSE, enhanced light absorption, and tunable-composition features. The review opens pathways and offers insights for practical realization of AlGaN-based axial NWs devices on scalable and low-cost silicon substrates.
AB - There have been recent research advances in AlGaN-based self-assembled nanowires (NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted molecular beam epitaxy. We review the basic growth kinetics on various foundry-compatiblemetal/ silicon-based substrates and the epistructure design for UV devices. We highlight the use of diffusion-barrier-metal thin film on silicon substrate as a solution to enhance device performance. NWs offer the opportunity to mitigate the detrimental quantum-confined Stark effect (QCSE), which lowers the recombination rate thereby reducing the device efficiency. On the other hand, the polarization-induced doping from the graded composition along NWs can be advantageous for eluding the inefficient doping in AlGaN-based UV devices. Sidewall surface states and the associate passivation treatment, as well as the use of ultrafast electron-microscopy characterization, are crucial investigations in shedding light on device performance under the influence of surface dangling bonds. For investigating the electrical performance of individual NWs and NWs light-emitting diode as a single entity, recent reports based on conductive atomic force microscopy measurements provide fast-prototyping in-process pass-fail evaluation and a means of improving growth for high-performance devices. Stress tests of NWs devices, crucial for reliable operation, are also discussed. Beyond applications in LEDs, an AlGaN-based NWs solar-blind photodetector demonstrated leveraging on the dislocation-free active region, reduced QCSE, enhanced light absorption, and tunable-composition features. The review opens pathways and offers insights for practical realization of AlGaN-based axial NWs devices on scalable and low-cost silicon substrates.
KW - AlGaN
KW - Conductive atomic force microscopy
KW - Electron microscopy
KW - Epitaxy
KW - Metal bilayer
KW - Metal preorienting layer
KW - Nanowires
KW - Plasma-assisted molecular beam epitaxy
KW - Surface passivation
KW - Surface states
UR - http://www.scopus.com/inward/record.url?scp=85050368789&partnerID=8YFLogxK
U2 - 10.1117/1.JNP.12.043511
DO - 10.1117/1.JNP.12.043511
M3 - Article
AN - SCOPUS:85050368789
SN - 1934-2608
VL - 12
JO - Journal of Nanophotonics
JF - Journal of Nanophotonics
IS - 4
M1 - 043511
ER -