TY - JOUR
T1 - Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions
AU - Xue, Fei
AU - He, Xin
AU - Ma, Yinchang
AU - Zheng, Dongxing
AU - Zhang, Chenhui
AU - Li, Lain-Jong
AU - He, Jr-Hau
AU - Yu, Bin
AU - Zhang, Xixiang
N1 - KAUST Repository Item: Exported on 2021-12-21
Acknowledged KAUST grant number(s): ORS-2018-CRG7-3717
Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award numbers: ORS-2019- CRG8- 4081 and ORS-2018-CRG7-3717, and by the City University of Hong Kong under award number: 9380107
PY - 2021/12/15
Y1 - 2021/12/15
N2 - Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polarization control over Schottky barriers. However, for over a decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In2Se3 memristors. Through rational interfacial engineering, their initial Schottky barrier heights and polarization screening charges at both terminals can be delicately manipulated. This enables us to find that ferroelectric resistance switching is determined by three independent variables: ferroelectric polarization, Schottky barrier variation, and initial barrier height, as opposed to the generally reported explanation. Inspired by these findings, we demonstrate volatile and nonvolatile ferroelectric memristors with large on/off ratios above 10$^{4}$. Our work can be extended to other planar long-channel and vertical ultrashort-channel ferroelectric memristors to reveal their ferroelectric resistance switching regimes and improve their performances.
AB - Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polarization control over Schottky barriers. However, for over a decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In2Se3 memristors. Through rational interfacial engineering, their initial Schottky barrier heights and polarization screening charges at both terminals can be delicately manipulated. This enables us to find that ferroelectric resistance switching is determined by three independent variables: ferroelectric polarization, Schottky barrier variation, and initial barrier height, as opposed to the generally reported explanation. Inspired by these findings, we demonstrate volatile and nonvolatile ferroelectric memristors with large on/off ratios above 10$^{4}$. Our work can be extended to other planar long-channel and vertical ultrashort-channel ferroelectric memristors to reveal their ferroelectric resistance switching regimes and improve their performances.
UR - http://hdl.handle.net/10754/674112
UR - https://www.nature.com/articles/s41467-021-27617-6
U2 - 10.1038/s41467-021-27617-6
DO - 10.1038/s41467-021-27617-6
M3 - Article
C2 - 34911970
SN - 2041-1723
VL - 12
JO - Nature Communications
JF - Nature Communications
IS - 1
ER -