Keyphrases
Indium Gallium Nitride (InGaN)
100%
Ultraviolet Light-emitting Diode (UV-LED)
100%
Aluminum Gallium Nitride (AlGaN)
100%
Tunnel Junction
100%
P-AlGaN
100%
Light-emitting Diodes
40%
Power Output
40%
Electron Overflow
40%
High Efficiency
20%
Order of Magnitude
20%
III-nitrides
20%
Valence Band
20%
P-type
20%
Device Design
20%
P-type Doping
20%
Electron Holes
20%
Induced Fields
20%
Hole Concentration
20%
Ni-P
20%
Injection Type
20%
Tunneling Layer
20%
Opposite Polarizations
20%
InGaN Layer
20%
Induced Electric Field
20%
Inverse Design
20%
Tunneling Probability
20%
Engineering
Light-Emitting Diode
100%
Induced Polarization
100%
Output Power
33%
Simulation Result
16%
Induced Electric Field
16%
Nitride
16%
Inverse Design
16%
Valence Band
16%
Hole Concentration
16%
Material Science
Hole Concentration
100%
Nitride Compound
100%