Vacancy-indium clusters in implanted germanium

Alexander I. Chroneos, R. Kube, Hartmut A. Bracht, Robin W. Grimes, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)38-40
Number of pages3
JournalChemical Physics Letters
Issue number1-3
StatePublished - Apr 2010

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


Dive into the research topics of 'Vacancy-indium clusters in implanted germanium'. Together they form a unique fingerprint.

Cite this