TY - JOUR
T1 - Vacancy-indium clusters in implanted germanium
AU - Chroneos, Alexander I.
AU - Kube, R.
AU - Bracht, Hartmut A.
AU - Grimes, Robin W.
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Computing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.
PY - 2010/4
Y1 - 2010/4
N2 - Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
AB - Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
UR - http://hdl.handle.net/10754/561463
UR - https://linkinghub.elsevier.com/retrieve/pii/S0009261410003702
UR - http://www.scopus.com/inward/record.url?scp=77950298571&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2010.03.005
DO - 10.1016/j.cplett.2010.03.005
M3 - Article
SN - 0009-2614
VL - 490
SP - 38
EP - 40
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -