Abstract
Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo4+ 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the exchange interactions between sulfur vacancy and the Mo4+ 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.
Original language | English (US) |
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Pages (from-to) | 2622-2627 |
Number of pages | 6 |
Journal | Journal of the American Chemical Society |
Volume | 137 |
Issue number | 7 |
DOIs | |
State | Published - Feb 25 2015 |
ASJC Scopus subject areas
- Catalysis
- General Chemistry
- Biochemistry
- Colloid and Surface Chemistry