TY - JOUR
T1 - Valley Hall Effect and Magnetic Moment in Magnetized Silicene
AU - Wang, Sake
AU - Zhang, Pengzhan
AU - Ren, Chongdan
AU - Tian, Hongyu
AU - Pang, Juan
AU - Song, Chi
AU - Sun, Minglei
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This study was funded by the National Natural Science Foundation of China (grant numbers 11704165, 11864047, and 21702082), the National Science Foundation for Post-doctoral Scientists of China (grant number 2017M621711), the Major Research Project for Innovative Group of Education Department of Guizhou Province (grant number KY[2018]028), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (grant number 17KJB140008), and the Science Foundation of Jinling Institute of Technology (grant numbers 40620062 and 40620064).
PY - 2019/3/16
Y1 - 2019/3/16
N2 - We investigate the physical properties of silicene with both staggered sublattice potential and magnetization by using Kubo formalism, the latter arises from the magnetic proximity effect by depositing Fe atoms to silicene or depositing silicene on an appropriate ferromagnetic insulator. Based on the low-energy continuum model of the system where inversion symmetry is broken, we show that the system exhibits spin half metal state when staggered sublattice potential is in the same magnitude with mean and staggered magnetization. Besides, Hall conductivity and magnetic moment are all valley dependent, so we investigate the valley Hall effect of the system further by considering magnetization exclusively. This means carriers in different valleys turning into opposite directions transverse to an in-plane electric field. At last, we prove these results by investigating Berry curvature that characterizing Hall transport, which is also valley dependent. These effects can be used to generate valley-polarized currents solely by magnetization, forming the basis for the valley-based electronics applications.
AB - We investigate the physical properties of silicene with both staggered sublattice potential and magnetization by using Kubo formalism, the latter arises from the magnetic proximity effect by depositing Fe atoms to silicene or depositing silicene on an appropriate ferromagnetic insulator. Based on the low-energy continuum model of the system where inversion symmetry is broken, we show that the system exhibits spin half metal state when staggered sublattice potential is in the same magnitude with mean and staggered magnetization. Besides, Hall conductivity and magnetic moment are all valley dependent, so we investigate the valley Hall effect of the system further by considering magnetization exclusively. This means carriers in different valleys turning into opposite directions transverse to an in-plane electric field. At last, we prove these results by investigating Berry curvature that characterizing Hall transport, which is also valley dependent. These effects can be used to generate valley-polarized currents solely by magnetization, forming the basis for the valley-based electronics applications.
UR - http://hdl.handle.net/10754/652994
UR - https://link.springer.com/article/10.1007%2Fs10948-019-5055-y
UR - http://www.scopus.com/inward/record.url?scp=85063041869&partnerID=8YFLogxK
U2 - 10.1007/s10948-019-5055-y
DO - 10.1007/s10948-019-5055-y
M3 - Article
SN - 1557-1939
VL - 32
SP - 2947
EP - 2957
JO - Journal of Superconductivity and Novel Magnetism
JF - Journal of Superconductivity and Novel Magnetism
IS - 9
ER -