TY - JOUR
T1 - Van der Waals Heteroepitaxial AZO/NiO/AZO/Muscovite (ANA/muscovite) Transparent Flexible Memristor
AU - Le, Van-Qui
AU - Do, Thi-Hien
AU - Duran Retamal, Jose Ramon
AU - Shao, Pao-Wen
AU - Lai, Yu-Hong
AU - Wu, Wen-Wei
AU - He, Jr-Hau
AU - Chueh, Yu-Lun
AU - Chu, Ying-Hao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is supported by the Ministry of Science and Technology, Taiwan (Grant Nos. MOST 106–2119-M-009–011-MY3, 106–2628-E-009-001-MY2, 106–2923-M-009-003-MY2, 105–2633-M-007-003, 106–2112-M-007–028-MY3, 107–2923-E-007-002 -MY3, 107–2112-M-007–030-MY3, 06–2923-E-007-006-MY2, 105–2119-M-009-009, 107–3017-F-007-002 and the Center for Emergent Functional Matter Science of National Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The author W.W.W. acknowledges the support from Ministry of Science and Technology (MOST) in Taiwan (MOST-107–3017-F-009-002) and “Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University”from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan.
PY - 2018/10/23
Y1 - 2018/10/23
N2 - Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio >105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.
AB - Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio >105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.
UR - http://hdl.handle.net/10754/629446
UR - https://www.sciencedirect.com/science/article/pii/S2211285518307705
UR - http://www.scopus.com/inward/record.url?scp=85057334520&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2018.10.042
DO - 10.1016/j.nanoen.2018.10.042
M3 - Article
SN - 2211-2855
VL - 56
SP - 322
EP - 329
JO - Nano Energy
JF - Nano Energy
ER -