Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500-1000 cm/s have been attained on mc-Si wafers.