Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions

Aurelien Manchon

Research output: Contribution to journalArticle


Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form {\bf T}=T_{||}{\bf M}x({\bf z}x{\bf M})+T_{\bot}{\bf z}x{\bf M}, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, $T_{\bot}$, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque $T_{||}$ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.
Original languageEnglish (US)
Pages (from-to)5
Number of pages1
JournalArxiv preprint
StatePublished - Oct 16 2011


Dive into the research topics of 'Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions'. Together they form a unique fingerprint.

Cite this