Weak localization scattering lengths in epitaxial, and CVD graphene

A. M.R. Baker; J. A. Alexander-Webber; T. Altebaeumer; T. J.B.M. Janssen; A. Tzalenchuk; S. Lara-Avila; S. Kubatkin; R. Yakimova; C. T. Lin; L. J. Li; R. J. Nicholas

doi:10.1103/PhysRevB.86.235441

Weak localization scattering lengths in epitaxial, and CVD graphene

A. M.R. Baker^*, J. A. Alexander-Webber, T. Altebaeumer, T. J.B.M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. T. Lin, L. J. Li, R. J. Nicholas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Weak localization in graphene is studied as a function of carrier density in the range from 1×1011 cm^-2 to 1.43×1013 cm ^-2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L_φ, L_i, and L_* on carrier density. We find no significant carrier dependence for L _φ, a weak decrease for L_i with increasing carrier density just beyond a large standard error, and a n^-1^/4 dependence for L_*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.

Original language	English (US)
Article number	235441
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.86.235441
State	Published - Dec 26 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.86.235441

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Baker, A. M. R., Alexander-Webber, J. A., Altebaeumer, T., Janssen, T. J. B. M., Tzalenchuk, A., Lara-Avila, S., Kubatkin, S., Yakimova, R., Lin, C. T., Li, L. J., & Nicholas, R. J. (2012). Weak localization scattering lengths in epitaxial, and CVD graphene. Physical Review B - Condensed Matter and Materials Physics, 86(23), Article 235441. https://doi.org/10.1103/PhysRevB.86.235441

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title = "Weak localization scattering lengths in epitaxial, and CVD graphene",

abstract = "Weak localization in graphene is studied as a function of carrier density in the range from 1×1011 cm-2 to 1.43×1013 cm -2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths Lφ, Li, and L* on carrier density. We find no significant carrier dependence for L φ, a weak decrease for Li with increasing carrier density just beyond a large standard error, and a n-1/4 dependence for L*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.",

author = "Baker, {A. M.R.} and Alexander-Webber, {J. A.} and T. Altebaeumer and Janssen, {T. J.B.M.} and A. Tzalenchuk and S. Lara-Avila and S. Kubatkin and R. Yakimova and Lin, {C. T.} and Li, {L. J.} and Nicholas, {R. J.}",

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T1 - Weak localization scattering lengths in epitaxial, and CVD graphene

AU - Baker, A. M.R.

AU - Alexander-Webber, J. A.

AU - Altebaeumer, T.

AU - Janssen, T. J.B.M.

AU - Tzalenchuk, A.

AU - Lara-Avila, S.

AU - Kubatkin, S.

AU - Yakimova, R.

AU - Lin, C. T.

AU - Li, L. J.

AU - Nicholas, R. J.

PY - 2012/12/26

Y1 - 2012/12/26

N2 - Weak localization in graphene is studied as a function of carrier density in the range from 1×1011 cm-2 to 1.43×1013 cm -2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths Lφ, Li, and L* on carrier density. We find no significant carrier dependence for L φ, a weak decrease for Li with increasing carrier density just beyond a large standard error, and a n-1/4 dependence for L*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.

AB - Weak localization in graphene is studied as a function of carrier density in the range from 1×1011 cm-2 to 1.43×1013 cm -2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths Lφ, Li, and L* on carrier density. We find no significant carrier dependence for L φ, a weak decrease for Li with increasing carrier density just beyond a large standard error, and a n-1/4 dependence for L*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.

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DO - 10.1103/PhysRevB.86.235441

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VL - 86

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 235441

ER -

Weak localization scattering lengths in epitaxial, and CVD graphene

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