TY - JOUR
T1 - Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks
AU - Boyeras Baldomá, S.
AU - Pazos, S. M.
AU - Aguirre, F. L.
AU - Ankonina, G.
AU - Kornblum, L.
AU - Yalon, E.
AU - Palumbo, F.
N1 - KAUST Repository Item: Exported on 2022-10-07
Acknowledgements: S. M. Pazos is currently with the Physical Science and Engineering Division, King Abdullah University of Science and Technology. This work has been funded by MINCyT (contracts PICT2013/1210, PICT2016/0579 and PME2015-0196), CONICET (project PIP-11220130100077CO) and UTN.BA (projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, MATUNBA4936 and CCUTNBA5182). Work at the Technion was supported by the Israeli Science Foundation (ISF Grant No. 1351/21). The samples were fabricated in the Technion's Micro-Nano Fabrication & Printing Unit (MNF&PU).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2022/9/20
Y1 - 2022/9/20
N2 - Tantalum oxide (Ta2O5) is widely used in electronics, with important applications in backend capacitors and memristors. However, major technological challenges have to be faced and solved. Also, concerns related to the reliability of these new stacks have to be taken into consideration. We report the reliability of Ta2O5 films focusing on the dynamics of the charge trapping and their leakage behavior under a constant voltage stress. We leverage the use of Nb:SrTiO3 back electrodes as a clean, well-defined surface, allowing the study of the Ta2O5 layer with no significant interface effects. The main features of the breakdown Ta2O5/Nb:SrTiO3 stacks are presented and analyzed in terms of an electromigration-based model. Our results outline the performance limits of Ta2O5 films, providing guidelines for development and integration of current and future devices.
AB - Tantalum oxide (Ta2O5) is widely used in electronics, with important applications in backend capacitors and memristors. However, major technological challenges have to be faced and solved. Also, concerns related to the reliability of these new stacks have to be taken into consideration. We report the reliability of Ta2O5 films focusing on the dynamics of the charge trapping and their leakage behavior under a constant voltage stress. We leverage the use of Nb:SrTiO3 back electrodes as a clean, well-defined surface, allowing the study of the Ta2O5 layer with no significant interface effects. The main features of the breakdown Ta2O5/Nb:SrTiO3 stacks are presented and analyzed in terms of an electromigration-based model. Our results outline the performance limits of Ta2O5 films, providing guidelines for development and integration of current and future devices.
UR - http://hdl.handle.net/10754/682271
UR - https://linkinghub.elsevier.com/retrieve/pii/S0038110122002337
UR - http://www.scopus.com/inward/record.url?scp=85138473654&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2022.108462
DO - 10.1016/j.sse.2022.108462
M3 - Article
SN - 0038-1101
VL - 198
SP - 108462
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -