Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

Henry S. Djie; Clara E. Dimas; Boon S. Ooi

doi:10.1109/LPT.2006.880796

Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

Henry S. Djie^*, Clara E. Dimas, Boon S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We demonstrate broadband superluminescent diode at ∼1.6-μm peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 °C under 8 kA/cm².

Original language	English (US)
Pages (from-to)	1747-1749
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2006.880796
State	Published - Aug 15 2006
Externally published	Yes

Keywords

Optical coherent tomography
Quantum-dash
Quantum-dot (QD)
Superluminescent diode (SLD)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.880796

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title = "Wideband quantum-dash-in-well superluminescent diode at 1.6 μm",

abstract = "We demonstrate broadband superluminescent diode at ∼1.6-μm peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 °C under 8 kA/cm2.",

keywords = "Optical coherent tomography, Quantum-dash, Quantum-dot (QD), Superluminescent diode (SLD)",

author = "Djie, {Henry S.} and Dimas, {Clara E.} and Ooi, {Boon S.}",

year = "2006",

month = aug,

day = "15",

doi = "10.1109/LPT.2006.880796",

language = "English (US)",

volume = "18",

pages = "1747--1749",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "16",

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TY - JOUR

T1 - Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

AU - Djie, Henry S.

AU - Dimas, Clara E.

AU - Ooi, Boon S.

PY - 2006/8/15

Y1 - 2006/8/15

N2 - We demonstrate broadband superluminescent diode at ∼1.6-μm peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 °C under 8 kA/cm2.

AB - We demonstrate broadband superluminescent diode at ∼1.6-μm peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 °C under 8 kA/cm2.

KW - Optical coherent tomography

KW - Quantum-dash

KW - Quantum-dot (QD)

KW - Superluminescent diode (SLD)

UR - http://www.scopus.com/inward/record.url?scp=33747616203&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.880796

DO - 10.1109/LPT.2006.880796

M3 - Article

AN - SCOPUS:33747616203

SN - 1041-1135

VL - 18

SP - 1747

EP - 1749

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

Abstract

Keywords

ASJC Scopus subject areas

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