Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

Nazek El-Atab, Ayman Rizk, Ali K. Okyay, Ammar Nayfeh

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V t shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

Original languageEnglish (US)
Article number112116
Issue number11
StatePublished - Nov 2013

ASJC Scopus subject areas

  • General Physics and Astronomy


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